Dow Electronic Materials
ArF Implant Resist

Product Category: Resists

Positive tone 193 nm implant resist has a good profile through pitch and excellent substrate compatibility.

Features

  • 130 nm 1:2 trench
  • 130 nm ISO trench
  • 130 nm 1:2 line and space
  • 130 nm ISO line

Benefits

  • Improved bright to dark field bias
  • Excellent process window performance
  • Good profile through pitch
  • Excellent substrate compatibility
Benefits of implant resists

130 nm 1:2 Trench

Benefits of implant resists

130 nm ISO Trench

Benefits of implant resists

130 nm 1:2 L/S

Benefits of implant resists

130 nm ISO Line

Figure 1: 150 nm, 120 °C/30S HMDS, Annular 0.75NA, 0.5/0.25, SB/PEB=100°C/120°C